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AAWSAP DIRD, Metallic Spintronics, March 2010

U.S. Department of War · 2010-03-23 · 27 pages · text from the file's own layer

The Defense Intelligence Agency's Defense Warning Office issued this Defense Intelligence Reference Document, dated 23 March 2010, as one of a series of advanced technology reports produced in FY 2009 under its Advanced Aerospace Weapon System Applications Program. The report reviews metallic spintronics, including giant magnetoresistance, spin-transfer-torque and antiferromagnetic spintronics, along with their applications. It concludes that spintronic devices could offer radiation-resistant, low-power electronics suited to aerospace use and long space trips.

From the source:Release of 2026-09-18 Incident: 3/23/10, Las Vegas, Nevada. Released with redactions. This document is a Defense Intelligence Reference Document (DIRD), a technical reference format used by the Defense Intelligence Agency (DIA) to capture baseline knowledge on a specific topic for later analytic use. DIRDs are best understood as reference and synthesis products rather than as original research. It is one of 38 DIRDs produced under the Advanced Aerospace Weapon System Applications Program (AAWSAP) between 2009 and 2011. Because AAWSAP’s scope permitted a broad range of supporting topics, not every DIRD in the series directly concerns aerospace systems or future threat assessment. The following summary reflects the DIRD’s scope and framing at the time of writing and should not be read as implying current validation of the concepts discussed. This DIRD surveys metallic spintronics, a branch of electronics that seeks to use both the electric charge and the magnetic spin of electrons to store, detect, and manipulate information, and argues that the field could lead to faster, lower-power, and more radiation-resistant devices than conventional semiconductor electronics. The report focuses on two main effects: giant magnetoresistance (GMR), which allows magnetic states to be read through changes in electrical resistance, and spin-transfer torque (STT), which allows electrical currents to change those magnetic states. The DIRD reviews their underlying physics, the experimental work then available, and possible applications in memory, sensors, oscillators, and logic devices. The document treats metallic spintronics as a promising field while emphasizing that many of its more advanced proposed applications still require substantial further development.

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transistor switching can be reduced dramatically, the thermal load associated with 40
MW/cm 2 will exceed that in a rocket nozzle. The failure of thermal management on a
chip might end the continued progress of the semiconductor industry well before 2035.
The International Technology Roadmap for Semiconductors (http://www. itrs.net) has
termed this imminent collapse the "Red Brick Wall," where "Red" indicates no "known
manufacturable solutions" (of reasonable confidence) exist for continued scaling in
some aspect of the semiconductor technology.
The scenario above motivates the search for signal-processing devices that dissipate
very little energy when they switch . The emerging spintronic technology might offer
such devices where information is carried by spin-in contrast to CMOS transistors,
where it is carried by charge-since spin has an inherent advantage over charge when it
comes to energy dissipation. Therefore, if a reliable way can be found to control and
manipulate spins, spintronic devices could offer higher data processing speeds, lower
electricity consumption, and many other advantages over conventional chips, perhaps
including the ability to carry out radically new quantum computations .
A spintronic device calls for efficient methods to generate, conduct, process, and detect
spin-encoded signals . We have reviewed the physics and emerg ing applications of two
principal spintronic phenomena-giant magnetoresistance and spin-transfer-torque
that provide means to detect (GMR) and manipulate (STT) the spin signals. GMR has
already spawned major technological change in the information storage industry with
the usage of GMR sensors and read heads and, along with tunneling magnetoresistance
(TMR), is expected to continue to dominate the detection of spin-encoded signals. STT
is a more recent development in spintronics that provides an efficient means of
controlling and manipulating spin distributions on the nanometer length scale and the
picosecond-time scale, thus positioning STT as the method of choice for fast processing
of spin signals in nanodevices.
What is the future of spintronic applications? A number of new spintronic devices based
on GMR and STT have been proposed. These include high -frequency (GHz) oscillators,
sources, and detectors, as well as magnetic field sensors-for example, in nonvolatile
memories such as racetrack and STT magnetic random access memory (STT-MRAM) .
However, much fundamental work remains to be done before we see commercial
applications of these devices. For the memory industry, development of these spintronlc
applications may lead to a universal memory that would combine cost benefits of
DRAM, speed of SRAM, and nonvolatility of flash RAM. Potentially all logic operations on
a chip could be carried out by manipulating spins in metallic systems instead of
manipulating charges in semiconductor transistors, as in conventional microchips.
Moreover, such operations could be combined on a chip with a universal memory. This
would result in a new scalable and radiation-resistarnt electronics, computers, and so
forth . The radiation resistance would be of particular interest for aerospace applications
because the radiation in space is known to severely damage conventional electronics by
building up a destructive charge in transistors. Long space trips that would expose
onboard electronics to years of radiation would benefit from the radiation resistance
and reduced power consumption (for example, like a nonvolatile memory that can
retain the stored information even when not powered) of metallic spintronic devices.
More generally, the impact of reduced power consumption in electronic devices is hard
to overestimate, as we rely on such devices in almost every aspect of our everyday
lives.
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