Defense Intelligence Reference Document Metallic Spintronics

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GMR structures provides a means to engineer a nanoscale high-frequency oscillator
powered and tuned by de current. Such an oscillator could have frequency
characteristics spanning more than 100 GHz and perhaps into terahertz range.
Linewidths as narrow as 2 megahertz were demonstrated (Reference 55), leading to
quality factors over 18,000. Potential applications for such high-frequency sources
include integrated transceivers for wireless and wired applications, as well as wireless
and wired chip-to-chip and on-chip communications. For the latter, logic circuits with a
spin wave bus were proposed (Reference 56, 57) as an interface between electronic
circuits and integrated spintronics circuits. Here spin waves are used for information
transmission and processing, and the STT effect can provide a means for efficient spin-
wave generation on the nanoscale.
In high-speed, high-density magnetic recording technology, STT could replace the
Oersted field currently used for writing magnetic bits in storage media (for example,
magnetic random access memory [MRAM]), thus leading to smaller and faster magnetic
memory. Figure l0a schematically shows a bit cell of a conventional MRAM. The bit
state is programmed to a 1\1" or '\0 11 by switching between the parallel and antiparallel
states of a GMR-like storage element. The first-generation MRAM utilizes magnetic
tunnel junctions (MTJ) as storage elements because of their higher magnetoresistance
ratios and impedance-matching constraints. However in scaling MRAM to small
dimensions, the same constraints are expected to drive a transition from MTJs to fully
metallic spin-valve storage elements. The switching between \\1" and \'0
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states
(writing) relies on magnetic reversal of the MTJ's free layer, achieved by passing
electrical currents down the "bit" and "write" lines, that generates a sufficiently strong
magnetic field at their intersection (that is, for a given MTJ). However, as the spatial
decay of this Oersted field is rather slow ( ~l/r2), it may affect neighboring cells. This
makes scaling of MRAM to small dimensions questionable.
(a)
Bypass Line
--+~ ~nding
• ~ ~d
..Source Drain
Si substrate
Write Word Line
(b)
Source
MTJ
~
•-/•·Drain
Si substrate
Figure 10. Conventional MRAM Cell (a) Versus STT MRAM Cell {b) (Reference 58)
STT MRAM (see Figure 10b) removes the constraints on scalability. Here the switching
of the free layer magnetic moment is achieved by SIT switching when a high-density
electrical current is driven directly through the storage element (MTJ or spin valve).
This writing is thus performed at high current levels, while the reading (measuring the
resistance of the element) is done at low currents. Since STT MRAM eliminates the need
for "write" and "bypass11
lines, a more compact memory can be realized.
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